The IRF3205 is a high-current, N-Channel HEXFET Power MOSFET housed in a TO-220 package. It features a maximum continuous drain current of 110A and a breakdown voltage of 55V. Its ultra-low on-resistance of just 8.0mΩ minimizes power loss and heat generation, making it ideal for high-power switching applications. [1, 2, 3]
Key Specifications
- Transistor Polarity: N-Channel
- Drain-Source Voltage (\(V_{DS}\)): Max 55V
- Continuous Drain Current (\(I_{D}\)): Up to 110A
- On-Resistance (\(R_{DS(on)}\)): 8.0mΩ (at \(V_{GS} = 10V\))
- Power Dissipation (\(P_{D}\)): 200W
- Gate Threshold Voltage: 2V to 4V
- Operating Temperature: -55°C to +175°C
Common ApplicationsBecause of its rugged design, fast switching speed, and low power dissipation, the IRF3205 is widely used in:
- DC Motor Drivers and speed controllers
- Power Inverters (such as solar setups and UPS systems)
- DC-DC Converters
- Battery management systems and high-power switching
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