IRF3205PBF N-Channel Power MOSFET (New Domestic)

IRF3205PBF N-Channel Power MOSFET (New Domestic)

Upgrade your power management and switching circuits with the IRF3205PBF N-Channel Power MOSFET. Utilizing advanced processing technology, this domestic variant achieves extremely low on-resistance per silicon area, ensuring exceptional efficiency and minimal power loss during operation.

Packaged in the universally preferred TO-220AB form factor, it is designed for straightforward through-hole mounting, excellent thermal dissipation, and compatibility with standard heatsinks. Whether you are building heavy-duty motor drivers, solar inverters, or custom DC-DC buck converters, this MOSFET provides the rugged reliability and fast switching speeds required for modern high-power applications.

Key Features

• Ultra-Low On-Resistance: Features a low RDS(on) of approximately 8 mOhm, which drastically reduces power dissipation and minimizes heat generation.

• High Current and Voltage Capacity: Supports a continuous drain current (ID) of up to 110A and a maximum drain-source voltage (VDSS) of 55V.

• Fast Switching Speed: Optimized for high-frequency PWM (Pulse Width Modulation) applications, improving overall system efficiency.

• Fully Avalanche Rated: Built to withstand transient voltage spikes and rugged electrical environments.

• Cost-Effective Domestic Variant: Offers dependable, standard-compliant performance tailored for budget-conscious production and prototyping.

Common Applications

• Inverters and UPS Systems: Ideal for DC-to-AC power conversion stages.

• Motor Control: Excellent for high-current DC motor speed control and H-bridge circuits.

• DC-DC Converters: Frequently used in high-efficiency buck, boost, and step-down regulator modules.

• Automotive Audio and Lighting: Reliable switching for high-power car audio amplifiers and LED drivers.

Technical Specifications

• Transistor Type: N-Channel

• Package / Case: TO-220AB

• Drain-to-Source Voltage (VDSS): 55V

• Continuous Drain Current (ID): 110A (at 25 degrees Celsius, package limited)

• Static Drain-to-Source On-Resistance (RDS(on)): Approx. 8 mOhm (0.008 Ohm)

• Gate Threshold Voltage (VGS(th)): 2.0V to 4.0V

• Maximum Power Dissipation (PD): 200W

• Operating Temperature Range: -55 to +175 degrees Celsius